Semiconductor light emitting device

ABSTRACT

Embodiments provides a semiconductor light emitting device, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, an insulator on one side of the second electrode layer, and a first electrode electrically connected to a one end of the first conductive semiconductor layer, on the insulator.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C. 126 to KoreanPatent Application No. 10-2008-0038117 (filed on Apr. 24, 2008), whichis hereby incorporated by reference in its entirety.

BACKGROUND

The present disclosure relates to a semiconductor light emitting device.

Group III-V nitride semiconductors have been variously applied to anoptical device such as blue and green Light Emitting Diodes (LED), ahigh speed switching device such as a Metal Oxide Semiconductor FieldEffect Transistor (MOSFET) and a High Electron Mobility Transistor(HEMT), and a light source of a lighting device or a display device.Particularly, light emitting device using a group III nitridesemiconductor has a direct transition bandgap corresponding to a regionfrom visible rays to ultraviolet and can realize high-efficiency lightradiation.

The nitride semiconductor is mainly used for an LED or a Laser Diode(LD), and studies have been continuously conducted to improve themanufacturing process or light efficiency of the nitride semiconductor.

SUMMARY

Embodiments provide a semiconductor light emitting device whichcomprises a second electrode layer under a plurality of compoundsemiconductor layers and a first electrode in the outer side thereof.

Embodiments provide a semiconductor light emitting device whichcomprises a second electrode layer disposed under a light emittingstructure, an insulator disposed on the one side of the second electrodelayer and a first electrode disposed on the insulator.

An embodiment provides a semiconductor light emitting device comprising:a first conductive semiconductor layer; an active layer under the firstconductive semiconductor layer; a second conductive semiconductor layerunder the active layer; a second electrode layer under the secondconductive semiconductor layer; an insulator on one side of the secondelectrode layer; and a first electrode electrically connected to a oneend of the first conductive semiconductor layer, on the insulator.

An embodiment provides a semiconductor light emitting device comprising:a light emitting structure comprising a first conductive semiconductorlayer, an active layer under the first conductive semiconductor layer,and a second conductive semiconductor layer under the active layer; asecond electrode layer under the light emitting structure; a firstelectrode electrically connected to the first conductive semiconductorlayer, in an outer side of the light emitting structure; and aninsulator between the first electrode and the second electrode layer.

An embodiment provides a semiconductor light emitting device comprising:a light emitting structure comprising a first conductive semiconductorlayer, an active layer under the first conductive semiconductor layer,and a second conductive semiconductor layer under the active layer; asecond electrode layer under the second conductive semiconductor layer;an insulator on the second electrode layer and in a one side of thelight emitting structure; and a first electrode between the insulatorand a one end of the first conductive semiconductor layer.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side-sectional view of a semiconductor light emitting deviceaccording to one embodiment.

FIG. 2 is a diagram illustrating an example where a wire is bonded withthe first electrode of FIG. 1.

FIGS. 3 to 8 are diagrams illustrating a process of manufacturing thesemiconductor light emitting device according to one embodiment.

FIG. 9 is a side-sectional view of a semiconductor light emitting deviceaccording to another embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the embodiments of the presentdisclosure, examples of which are illustrated in the accompanyingdrawings.

In the following description, it will be understood that when a layer(or film) is referred to as being ‘on’ another layer or substrate, itcan be directly on the another layer or substrate, or intervening layersmay also be present. Further, it will be understood that when a layer isreferred to as being ‘under’ another layer, it can be directly under theanother layer, and one or more intervening layers may also be present.In addition, it will also be understood that when a layer is referred toas being ‘between’ two layers, it can be the only layer between the twolayers, or one or more intervening layers may also be present.

FIG. 1 is a side-sectional view of a semiconductor light emitting deviceaccording to one embodiment. FIG. 2 is a diagram illustrating an examplewhere a wire is bonded with the first electrode of FIG. 1.

Referring to FIG. 1, a semiconductor light emitting device 100 comprisesa first conductive semiconductor layer 110, an active layer 120, asecond conductive semiconductor layer 130, a second electrode layer 140,a conductive support member 150, an insulator 160, and a first electrode170.

The semiconductor light emitting device 100 comprises a Light EmittingDiodes (LED) using a group III-V compound semiconductor. The LED may bea chromatic LED emitting chromatic light such as blue light, red lightor green light, or may be an ultraviolet (UV) LED. The emission light ofthe LED may be variously implemented in the spirit and scope ofembodiments.

The first conductive semiconductor layer 110 may be selected from thecompound semiconductors of group III-V elements (on which a firstconductive dopant is doped), for example, GaN, AlN, AlGaN, InGaN, InN,InAlGaN, AlInN, AlGaAs, GaP, GaAs and GaAsP.

When the first conductive semiconductor layer 110 is an N-typesemiconductor layer, the first conductive dopant comprises an N-typedopant such as Si, Ge, Sn, Se and Te. The first conductive semiconductorlayer 110 may serve as an electrode contact layer and may be formed in asingle layer or multi layers, but is not limited thereto.

The first electrode 170 is electrically connected to the one end 115 ofthe first conductive semiconductor layer 110. The first electrode 170may be disposed under the one end 115 of the first conductivesemiconductor layer 110, or may be disposed in a line at an outer side.A power supply source having a first polarity is applied to the firstelectrode 170. Herein, a roughness (not shown) of a certain shape may beformed on the entire surface of the first conductive semiconductor layer110, and may be added or modified in the spirit and scope ofembodiments.

Moreover, a translucent electrode layer (not shown) may be formed on thefirst conductive semiconductor layer 110, and diffuses the power supplysource having the first polarity applied by the first electrode 170 toan entire region. The translucent electrode layer may comprise at leastone of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tinoxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zincoxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx,RuOx/ITO, Ni/IrOx/Au and Ni/IrOx/Au/ITO.

The active layer 120 is formed under the first conductive semiconductorlayer 110, and the active layer 120 may be formed in a single quantumwell structure or a multiple quantum well structure. The active layer120 may form the period of a well layer and a barrier layer, forexample, the period of an InGaN well layer/GaN barrier layer or theperiod of an AlGaN well layer/GaN barrier layer by using the compoundsemiconductor materials of group III-V elements.

The active layer 120 may be formed of a material having a bandgap energyaccording to the wavelength of an emitting light. The active layer 120may comprise a material that emits a chromatic light such as a lighthaving a blue wavelength, a light having a red wavelength and a lighthaving a green wavelength, but is not limited thereto. A conductive cladlayer may be formed on and/or under the active layer 120, and may beformed in an AlGaN layer.

The second conductive semiconductor layer 130 is formed under the activelayer 120, and may be formed of at least one of the compoundsemiconductors of group III-V elements (on which a second conductivedopant is doped), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs and GaAsP. When the second conductivesemiconductor layer 130 is a P-type semiconductor layer, the secondconductive dopant may comprise a P-type dopant such as Mg and Ze. Thesecond conductive semiconductor layer 130 may serve as an electrodecontact layer and may be formed in a single layer or multi layers, butis not limited thereto.

Herein, the first conductive semiconductor layer 110, the active layer120 and the second conductive semiconductor layer 130 may be defined asa light emitting structure 135. Moreover, the first conductivesemiconductor layer 110 may be formed of a P-type semiconductor, and thesecond conductive semiconductor layer 130 may be formed of an N-typesemiconductor. A third conductive semiconductor layer, for example, anN-type semiconductor layer or a P-type semiconductor layer, may beformed under the second conductive semiconductor layer 130. Accordingly,the light emitting structure 135 may comprise at least one of an N-Pjunction structure, a P-N junction structure, an N-P-N junctionstructure and a P-N-P junction structure.

The second electrode layer 140 is formed under the second conductivesemiconductor layer 130. The second electrode layer 140 may be formed ofa reflection electrode material, or may be formed of at least one of Ag,Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and a material consisting oftheir selective combination. Herein, the reflection electrode materialmay be composed of a material having characteristic where a reflectionrate is equal to or higher than 50%.

An ohmic contact layer (not shown), in which a plurality of patterns areformed in a matrix shape or/and a layer type, may be formed in thesecond electrode layer 140. The ohmic contact layer comprises at leastone of materials such as ITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO and ATO.

Herein, the second electrode layer 140 may be schottky/ohmic contactedto the second conductive semiconductor layer 130. When the ohmic contactlayer exists, the second electrode layer 140 is schottky contacted tothe second conductive semiconductor layer 130, and the ohmic contactlayer is ohmic contacted to the second conductive semiconductor layer130. Accordingly, the second electrode layer 140 and the ohmic contactlayer may divide a current applied to the second conductivesemiconductor layer 130 because they have different electricalcharacteristics.

The second electrode layer 140 serves as an electrode which stablyprovides a power supply source having a second polarity to the lightemitting structure 135, and reflects light incident though the secondconductive semiconductor layer 130.

The conductive support member 150 is formed under the second electrodelayer 140. The conductive support member 150 may be formed of at leastone of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo),copper-tungsten (Cu—W) and carrier wafer (for example, Si, Ge, GaAs,ZnO, SiC and the like). The conductive support member 150 may be formedin an electro plating process, but is not limited thereto.

The second electrode layer 140 and the conductive support member 150 maybe used as a second electrode member which provides the power supplysource having the second polarity to the light emitting structure 135,and the second electrode member may be formed in a single layer or multilayers. Herein, the second electrode member having the single layer maybe attached under the second conductive semiconductor layer 130 withadhesives.

An etched region A1 exists in the outer side of the light emittingstructure 135, which may be disposed more inward than the edge of thesecond electrode layer 140.

The first electrode 170 is insulated from the layers 120, 130 and 140 bythe insulator 160, and is electrically connected to the first conductivesemiconductor layer 110. The first electrode 170 may be formed of atleast one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au, but is notlimited thereto.

The insulator 160 comprises side wall portions 161 and 162, a baseportion 163, and a support portion 164. The insulator 160 may be formedof at least one of SiO₂, Si₃N₄, Al₂O₃ and TiO₂. The side wall portions161 and 162 of the insulator 160 are formed in the outer surface of thefirst electrode 170, and may be formed in a circle or polygon shape. Inthis case, the first electrode 170 may be formed in a circle or polygonshape.

The inner side wall portion 161 of the side wall portions 161 and 162 isdisposed between the first electrode 170 and the outer side of thesecond conductive semiconductor layer 130 and the active layer 120, andinsulates the inner side surface of the first electrode 170 from thelayers 120 and 130. Moreover, the inner side wall portion 161 isextended to the bottom of the one end 115 of the first conductivesemiconductor layer 110, and can electrically disconnect the firstelectrode 170 and the active layer 120. The one end 115 of the firstconductive semiconductor layer 110 is formed to partially overlap on thefirst electrode 170.

The outer side wall portion 162 of the side wall portions 161 and 162insulates other side surface of the first electrode 170 in the channelregion of a chip, and prevents the outer side of the first electrode 170from being exposed.

The base portion 163 is formed between the first electrode 170 and thesecond electrode layer 140, and is disposed under the side wall portions161 and 162. The base portion 163 is formed on the one side of thesecond electrode layer 140, and electrically insulates the firstelectrode 170 and the second electrode layer 140.

The support portion 164 extended to the inner side of the base portion163 is disposed between the second conductive semiconductor layer 130and the second electrode layer 140, and prevents the insulator 160 frombeing separated from a chip.

A passivation portion 165 may be formed around the top of the secondelectrode layer 140. The passivation portion 165 has a ring shape or abelt shape, and may be connected to the base portion 163 of theinsulator 160. The material of the passivation portion 165 may be thesame as that of the insulator 160. That is, the insulator 160 mayfurther comprise the passivation portion 165.

Moreover, the passivation portion 165 may be formed in a materialdifferent from the insulator 160, for example, a conductive material.For example, the passivation portion 165 may comprise at least one ofITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO and ATO. The passivation portion165 may not be formed.

The passivation portion 165 separates the light emitting structure 135from the second electrode layer 140, and thus, can prevent influencesthat are transferred from the second electrode layer 140 to the sidewall of the light emitting structure 135.

The first electrode 170 is disposed on the outer side of the lightemitting structure 135 and the one side of the second electrode layer140 by the insulator 160, is electrically connected to the firstconductive semiconductor layer 110, and is electrically opened from thelayers 120, 130 and 140.

Referring to FIG. 2, a wire 180 is bonded on the first electrode 170. Inthis case, the wire 180 is connected to the first electrode 170 which isdisposed in the outer side of the semiconductor light emitting device100, and thus, may be disposed outward the semiconductor light emittingdevice 100.

The power supply source having the first polarity is provided to thefirst conductive semiconductor layer 110 through the first electrode170, and the power supply source having the second polarity is providedthrough the conductive support member 150 and the second electrode layer140. Light radiated from the active layer 120 of the semiconductor lightemitting device 100 is irradiated in a forward direction.

At this point, there is no obstacle in the top of the first conductivesemiconductor layer 110, thereby decreasing obstacles that obstructs thetraveling of light L1.

For example, if the first electrode is disposed in the top of the firstconductive semiconductor layer and a wire is bonded, the followinglimitations may occur. The first electrode and the wire may serve asobstacles that obstruct a light path extracted to the top of the firstconductive semiconductor layer. That is, there may occur limitationsthat the wire and the first electrode disposed in the upper side of thefirst conductive semiconductor layer absorb light.

The first electrode 170 is disposed in the side of the semiconductorlight emitting device 100, and thus, the wire 180 does not pass thoughthe upper portion of the semiconductor light emitting device 100.Accordingly, light extraction efficiency can be improved.

FIGS. 3 to 8 are diagrams illustrating a process of manufacturing thesemiconductor light emitting device according to one embodiment.

Referring to FIG. 3, the light emitting structure 135 on which aplurality of compound semiconductor layers are stacked is formed on asubstrate 101. The light emitting structure 135 may comprise the firstconductive semiconductor layer 110, the active layer 120 and the secondconductive semiconductor layer 130 which are sequentially stacked.

The substrate 101 may be selected from the group consisting of sapphiresubstrate (Al₂O₃), GaN, SiC, ZnO, Si, GaP, InP and GaAs. Aconcave-convex pattern may be formed on the substrate 101, but is notlimited thereto.

A group III-V compound semiconductor may grow on the substrate 101.Herein, the growth equipment of the compound semiconductor may beimplemented with electron beam evaporator, Physical Vapor Deposition(PVD), Chemical Vapor Deposition (CVD), Plasma Laser Deposition (PLD),dual-type thermal evaporator, sputtering and Metal Organic ChemicalVapor Deposition (MOCVD), but is not limited thereto.

A buffer layer (not shown) or/and an undoped semiconductor layer (notshown) may be formed on the substrate 101. The buffer layer may beformed of a single crystal buffer layer or a group III-V compoundsemiconductor, and decreases a lattice constant difference with thesubstrate 110. The undoped semiconductor layer may be formed of aGaN-based semiconductor. The substrate 101, the buffer layer and theundoped semiconductor layer may be separated or removed after the growthof a thin film. Herein, a separate patterned metal material (not shown)may be formed between the substrate 101 and the first conductivesemiconductor layer 110 for protecting the active layer 120.

The first conductive semiconductor layer 110 is formed on the substrate101. The first conductive semiconductor layer 110 may be selected fromthe compound semiconductors of group III-V elements (on which a firstconductive dopant is doped), for example, GaN, AlN, AlGaN, InGaN, InN,InAlGaN, AlInN, AlGaAs, GaP, GaAs and GaAsP. When the first conductivesemiconductor layer 110 is an N-type dopant, the first conductive dopantcomprises an N-type dopant such as Si, Ge, Sn, Se and Te.

The active layer 120 is formed of a group III-V compound semiconductoron the first conductive semiconductor layer 110, and has a singlequantum well structure or a multiple quantum well structure. The activelayer 120 may comprise a material that emits a chromatic light such as alight having a blue wavelength, a light having a red wavelength and alight having a green wavelength. A conductive clad layer may be formedon and/or under the active layer 120 and may be formed in an AlGaNlayer, but is not limited thereto.

The second conductive semiconductor layer 130 is formed on the activelayer 120, and may be formed of at least one of the compoundsemiconductors of group III-V elements (on which a second conductivedopant is doped), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs and GaAsP. When the second conductivesemiconductor layer 130 is a P-type semiconductor layer, the secondconductive dopant may comprise a P-type dopant such as Mg and Ze.

A third conductive semiconductor layer, for example, an N-typesemiconductor layer or a P-type semiconductor layer, may be formed onthe second conductive semiconductor layer 130. Accordingly, the lightemitting structure 135 may comprise at least one of an N-P junctionstructure, a P-N junction structure, an N-P-N junction structure and aP-N-P junction structure.

Referring to FIG. 4, the one-side region 167 of the second conductivesemiconductor layer 110 is exposed in a first mesa etching process.Herein, the first mesa etching process is performed in a portion of thesecond conductive semiconductor layer 130 until the first conductivesemiconductor layer 110 is exposed in a dry or/and wet etching process.The etching process may be changed in the spirit and scope ofembodiments.

The first electrode 170 is formed in the one-side region 167 of thefirst conductive semiconductor layer 110. The first electrode 170 may beformed of at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au,but is not limited thereto. The one side of the first conductivesemiconductor layer 110 contacts the bottom of the first electrode 170,and the size of the contacted region may be changed according to anetching region by the first mesa etching process.

Herein, the bottom of the first electrode 170 may be electricallyconnected to the first conductive semiconductor layer 110.

The thickness H1 of the first electrode 170 heightens or lowers the topof the second conductive semiconductor layer 130.

The first electrode 170 is separated from the second conductivesemiconductor layer 130 and the side surface of the active layer 120 ata certain interval, and may be formed in a circle shape, a polygon shapeor a line shape.

Referring to FIG. 5, the insulator 160 is formed in the outer surfaceand top of the first electrode 170. The insulator 160 comprises the sidewall portions 161 and 162, the base portion 163 and the support portion164, and covers the exposed region of the first electrode 170. Theinsulator 160 may be formed of at least one of SiO₂, Si₃N₄, Al₂O₃ andTiO₂.

The side wall portions 161 and 162 are formed in the outer surface ofthe first electrode 170. The inner side wall portion 161 insulates theinner side surface of the first electrode 170 and the first conductivesemiconductor layer 110, and insulates the active layer 120 and the oneside of the second conductive semiconductor layer 130. The outer sidewall portion 162 insulates other side surface of the first electrode 170in the channel region of the chip. Accordingly, the side wall portions161 and 162 prevent the outer side of the first electrode 170 from beingexposed.

The base portion 163 is formed in the top of the first electrode 170,and insulates the top of the first electrode 170. The support portion164 extended to the inner side of the base portion 163 supports theentirety of the insulator 160.

The passivation portion 165 may be formed along the outer side of thetop of the second conductive semiconductor layer 130. The passivationportion 165 has a ring shape or a belt shape, and may be connected tothe base portion 163 of the insulator 160. The material of thepassivation portion 165 may be the same as that of the insulator 160.That is, the insulator 160 may further comprise the passivation portion165.

Moreover, the passivation portion 165 may be formed in a materialdifferent from the insulator 160, for example, a conductive material.For example, the passivation portion 165 may comprise at least one ofITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO and ATO. The passivation portion165 may not be formed.

Referring to FIG. 6, the second electrode layer 140 is formed on thesecond conductive semiconductor layer 130 and the insulator 160, theconductive support member 150 is formed on the second electrode layer140.

The passivation portion 165, which is disposed around the top of thesecond conductive semiconductor layer 130, separates the light emittingstructure 135 from the second electrode layer 140, and thus, can preventinfluences that are transferred from the second electrode layer 140 tothe side wall of the light emitting structure 135.

The second electrode layer 140 may be formed of at least one ofreflection electrode materials, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru,Mg, Zn, Pt, Au, Hf and a material consisting of their selectivecombination. An ohmic contact layer (not shown), in which a plurality ofpatterns are formed in a matrix shape or/and a layer type, may be formedbetween the second electrode layer 140 and the second conductivesemiconductor layer 130. The ohmic contact layer comprises at least oneof materials such as ITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO and ATO.

The second electrode layer 140 serves as an electrode which stablyprovides the power supply source having the second polarity to the lightemitting structure 135. Herein, the second electrode layer 140 may beschottky/ohmic contacted to the second conductive semiconductor layer130. When the ohmic contact layer exists, the ohmic contact layer andthe second electrode layer 140 may divide a current applied to thesecond conductive semiconductor layer 130 because they have differentelectrical resistances.

The conductive support member 150 may be formed of at least one of Cu,Au, Ni, Mo, Cu—W and carrier wafer (for example, Si, Ge, GaAs, ZnO, SiCand the like). Herein, the second electrode layer 140, for example, maybe formed in a sputtering process. The conductive support member 150,for example, may be formed in a plating process. The formation processesmay be changed in the spirit and scope of embodiments.

Referring to FIGS. 6 and 7, the substrate 101 is removed. In this case,the substrate 101 is disposed upward and is removed.

The substrate 101 that is disposed under the first conductivesemiconductor layer 110 is removed in a physical/chemical process. Forexample, when laser ray having a wavelength of a certain region isirradiated to the substrate 101, a heating energy is concentrated on aboundary surface between the substrate 101 and the first conductivesemiconductor layer 110, and thus the substrate 101 is separated.Furthermore, a polishing process using an Inductively coupledPlasma/Reactive Ion Etching (ICP/RCE) process may be performed on thesurface of the first conductive semiconductor layer 110 from which thesubstrate 101 has been removed.

When a non-conductive semiconductor layer, for example, a buffer layeror/and an undoped semiconductor layer exists between the substrate 101and the first conductive semiconductor layer 110, it may be removed inan etching process or a polishing process, but is not limited thereto.

Referring to FIGS. 7 and 8, the one side of the first conductivesemiconductor layer 110 is disposed on the first electrode 170 and theinsulator 160.

A roughness (not shown) of a certain shape may be formed on the top ofthe first conductive semiconductor layer 110. Moreover, a translucentelectrode layer (not shown) may be formed on the first conductivesemiconductor layer 110, and may diffuse a current. The translucentelectrode layer may comprise at least one of ITO, IZO, IZTO, IAZO, IGZO,IGTO, AZO, ATO, gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO,Ni/IrOx/Au and Ni/IrOx/Au/ITO.

A second mesa etching process is performed on the light emittingstructure 135. In this case, an etched region A1 exists in the outerperimeter of the light emitting structure 135, which is disposed moreinward than the edge of the second electrode layer 140. Herein, theregion A1 may not exist.

The second mesa etching process may use a wet or/and dry etchingprocess, and may be changed in the spirit and scope of embodiments.

When the second mesa etching process is performed in a portion of theone-side region D1 of the first conductive semiconductor layer 110, thetop of the first electrode 170 is exposed in the one side of the firstconductive semiconductor layer 110.

Since the certain region D2 of the first conductive semiconductor layer110 is disposed to overlap on the first electrode 170, the firstelectrode 170 is electrically connected to the one end 115 of the firstconductive semiconductor layer 110.

In the semiconductor light emitting device 100, the first electrode 170is disposed in the side direction of the first conductive semiconductorlayer 110, and a wire bonded to the first electrode 170 may be disposedin the outer side of the semiconductor light emitting device 100.Accordingly, the light extraction efficiency of the semiconductor lightemitting device 100 can be improved.

FIG. 9 is a side-sectional view of a semiconductor light emitting deviceaccording to another embodiment. In description of another embodiment,repetitive description on the same elements as those of one embodimentwill be omitted and refers to that of one embodiment.

Referring to FIG. 9, a semiconductor light emitting device 100Aaccording to another embodiment comprises the first conductivesemiconductor layer 110, the active layer 120, the second conductivesemiconductor layer 130, the second electrode layer 140, the conductivesupport member 150, a plurality of insulators 160 and 160A, and aplurality of first electrodes 170 and 170A.

The plurality of insulators 160 and 160A are disposed in the both sidesof the light emitting structure 135 respectively, and electricallyinsulate the first electrodes 170 and 170A and the layers 120, 130 and140. A detailed description on the insulators 160 and 160A refers to oneembodiment.

In the plurality of first electrodes 170 and 170A, regions D2 and D3where the one side 115 and other side 117 of the first conductivesemiconductor layer 110 overlap may be identical to or different fromeach other.

The plurality of first electrodes 170 and 170A may be electricallyconnected by an electrode pattern formed on the first conductivesemiconductor each other.

In the semiconductor light emitting device 100A, the first electrodes170 and 170A are disposed in the both-side directions of the firstconductive semiconductor layer 110 respectively, and a plurality ofwires bonded to the first electrodes 170 and 170A may be disposed in theouter side of the semiconductor light emitting device 100A. Accordingly,the light extraction efficiency of the semiconductor light emittingdevice 100A can be improved.

Embodiments dispose the first electrode in the outer side of theplurality of compound semiconductor layers, thereby solving lightabsorption limitations due to the first electrode and the wire.

Embodiments can improve light efficiency.

Embodiments can improve the reliability of the semiconductor lightemitting device.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. A semiconductor light emitting device, comprising: a first conductivesemiconductor layer; an active layer under the first conductivesemiconductor layer; a second conductive semiconductor layer under theactive layer; a second electrode layer under the second conductivesemiconductor layer; an insulator on one side of the second electrodelayer; and a first electrode electrically connected to a one end of thefirst conductive semiconductor layer, on the insulator.
 2. Thesemiconductor light emitting device according to claim 1, comprising aconductive support member under the second electrode layer.
 3. Thesemiconductor light emitting device according to claim 1, wherein theinsulator comprises: a base portion on a one side of the secondelectrode layer and under the first electrode; and a side wall portionaround the first electrode.
 4. The semiconductor light emitting deviceaccording to claim 3, wherein the insulator comprises a support portionpartially extended from the base portion, between the second electrodelayer and the second conductive semiconductor layer.
 5. Thesemiconductor light emitting device according to claim 3, wherein theside wall portion electrically insulates the second conductivesemiconductor layer, the active layer and the first electrode.
 6. Thesemiconductor light emitting device according to claim 3, wherein thefirst electrode is formed in a circle shape, a polygon shape or a lineshape on the base portion.
 7. The semiconductor light emitting deviceaccording to claim 1, comprising a second insulator between other sideof the second electrode layer and the second conductive semiconductorlayer, or a second insulator on the other side of the second electrodelayer and another first electrode on the second insulator.
 8. Thesemiconductor light emitting device according to claim 1, wherein areflection rate of the second electrode layer is equal to or higher than50%.
 9. A semiconductor light emitting device, comprising: a lightemitting structure comprising a first conductive semiconductor layer, anactive layer under the first conductive semiconductor layer, and asecond conductive semiconductor layer under the active layer; a secondelectrode layer under the light emitting structure; a first electrodeelectrically connected to the first conductive semiconductor layer, inan outer side of the light emitting structure; and an insulator betweenthe first electrode and the second electrode layer.
 10. Thesemiconductor light emitting device according to claim 9, wherein thelight emitting structure comprises an N-type semiconductor layer or aP-type semiconductor layer between the second conductive semiconductorlayer and the second electrode layer.
 11. The semiconductor lightemitting device according to claim 9, wherein the insulator insulatesthe first electrode and an outer side of the second conductivesemiconductor layer and the active layer.
 12. The semiconductor lightemitting device according to claim 9, wherein the first electrode isseparated from the second conductive semiconductor layer and the activelayer, and is formed under a one end of the first conductivesemiconductor layer.
 13. The semiconductor light emitting deviceaccording to claim 9, wherein: the first electrode and the insulator aredisposed in plurality, the plurality of first electrodes are disposed inboth sides of the second electrode layers respectively, and theplurality of insulators are disposed in the both sides of the secondelectrode layers respectively.
 14. The semiconductor light emittingdevice according to claim 9, comprising roughness or/and a translucentelectrode layer on the first conductive semiconductor layer.
 15. Thesemiconductor light emitting device according to claim 9, comprising: anohmic contact layer comprising a plurality of patterns under the secondelectrode layer; and a conductive support member under the secondelectrode layer and the ohmic contact layer.
 16. A semiconductor lightemitting device, comprising: a light emitting structure comprising afirst conductive semiconductor layer, an active layer under the firstconductive semiconductor layer, and a second conductive semiconductorlayer under the active layer; a second electrode layer under the secondconductive semiconductor layer; an insulator on the second electrodelayer and in a one side of the light emitting structure; and a firstelectrode between the insulator and a one end of the first conductivesemiconductor layer.
 17. The semiconductor light emitting deviceaccording to claim 16, comprising a conductive support member under thesecond electrode layer.
 18. The semiconductor light emitting deviceaccording to claim 16, wherein the insulator comprises: a base portionon a one side of the second electrode layer and under the firstelectrode; and a side wall portion around the first electrode.
 19. Thesemiconductor light emitting device according to claim 18, comprising asupport portion extended from the base portion, between the secondelectrode layer and the second conductive semiconductor layer; and apassivation portion around a top surface of the second electrode layer.20. The semiconductor light emitting device according to claim 16,comprising a passivation portion in an outer perimeter between thesecond electrode layer and the second conductive semiconductor layer,wherein the passivation portion comprises at least one of SiO₂, Si₃N₄,Al₂O₃, TiO₂, ITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO and ATO.